AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μAdc)
VGS(th)
2.5
2.9
3.5
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 850 mAdc)
VGS(Q)
?
3.9
?
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.25
?
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=2Adc)
gfs
?
5
?
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.7
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 850 mA, Pout
= 19 W Avg., f = 2112.5 MHz,
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.IM3
measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14.5
?
dB
Drain Efficiency
ηD
24
26
?
%
Intermodulation Distortion
IM3
?
--37.5
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
?
--40.5
-- 3 8
dBc
Input Return Loss
IRL
?
-- 1 5
-- 9
dB
1. Part is internally matched both on input and output.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF5S21100HSR5
MOSFET RF N-CHAN 28V 23W NI-780S
MRF5S21130HSR5
MOSFET RF N-CHAN 28V 28W NI-880S
MRF5S4125NR1
MOSFET RF SGL 450MHZ TO-270-4
MRF5S4140HSR5
MOSFET RF N-CHAN 28V 28W NI-780S
MRF5S9070MR1
MOSFET RF N-CH 26V 70W TO-270-2
MRF5S9070NR5
MOSFET RF N-CH 26V 70W TO-270-2
MRF5S9080NR1
MOSFET RF N-CH 26V 80W TO-270-4
MRF5S9100MR1
MOSFET RF N-CH 26V 20W TO-270-4
相关代理商/技术参数
MRF5S21090L
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21090LR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21090LSR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors
MRF5S21100HR3
功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21100HR5
功能描述:射频MOSFET电源晶体管 HV5 LDMOS WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S21100HSR3
功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S21100HSR5
功能描述:MOSFET RF N-CHAN 28V 23W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5S21100LR3
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs